Pengaruh DEA dan Waktu Dipping terhadap Nilai Band Gap Lapisan Tipis CuSnO3
Main Article Content
Abstract
CuSnO3 is one of the semiconductor materials that can be used in the manufacture of thin film. CuSnO3 is an amorphous semiconductor with a band gap of 2.0-2.5 eV. Dip-coating is one method that can be used to synthesize a thin film of CuSnO3. This study aims to see the effect of DEA additives and dipping time on the band gap value of a thin film of CuSnO3. The results of a thin film of CuSnO3 using the dip-coating method with DEA variations of 1 ml, 1.5 ml, and 2 ml as additives, obtained band gap values of 2.55 eV, 2.41 eV, and 2.31 eV. The larger the volume of DEA, the smaller the band gap value produced. At dipping times of 10 minutes, 15 minutes, and 20 minutes, band gap values of 2.58 eV, 2.31 eV, and 2.26 eV were recorded. The longer the time it takes to dye, the smaller the band gap value produced.
Citation Metrics:
Downloads
Citation Metrics & Similar Scopus Articles
-
Xu J. (2027)The Band Structure of In-Plane Elastic Cracked Phononic Crystals Based on the Local RBF Collocation MethodAdvances in Applied Mathematics and Mechanics, 19(1), 397-417
-
Li J. (2027)Competition and interaction between shear-banding and cleavage-cracking in an Fe-based metallic glassJournal of Materials Science and Technology, 288, 131-142
-
Jiang Y. (2027)From Screening to Site Control: Phytic-Acid Mediated P-Tuning of M–N Coordination to Balance Iodine Adsorption and Stability in Zn–I2 BatteriesNano Micro Letters, 19(1)
Article Details
Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.
Article Sidebar
Page Numbers:
1347-1356
Digital Object ID:
Viewed: 430 times
Downloaded: 338 times
LYAS Publisher cordially invites qualified professionals to serve as Editors or Reviewers. Your expertise will make an important contribution to maintaining and strengthening the academic quality of our publications. Interested applicants are kindly requested to complete the application form at the following link: Editors & Reviewers
Please feel free to contact us if you need any further information about the submission process or if you have any additional questions.
Authors:
Copyright :Authors retain copyright and grant the journal right of first publication.
Explore Our Journals
Find the journal that best fits your research. If this journal does not match your manuscript’s scope, explore our portfolio below to select a more suitable publication venue.