Theoretical Study of Electrical Properties of a Germanium and Gallium Arsenide P-N Junction Diode in an Open Circuit

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Vol 3 No 2 (2025): Journal of Multidisciplinary Science: MIKAILALSYS
Page Numbers: 625-642
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Published: Apr 13, 2025
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Authors:
Bello Adekunle Kazeem1*
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Bello Adekunle Kazeem
Bells University of Technology, Ota, Nigeria

Abstract

Theoretical study of electrical properties of a Germanium and Gallium arsenide p-n junction diode in an open circuit is investigated using one dimensional Poisson equation. It is assumed that the conduction electrons and holes obey Boltzmann equation of statistical mechanics. The comparison of electrical properties variation within the p-n junction for the two semi-conductor materials is describe and discussed. There is high intrinsic concentration in elemental semiconductor , while the bond existing in doped semiconductor  results in lesser value. The corresponding electron and hole concentrations, the temperature values are within (200 – 500) K. The curves for a plane p-n junction in germanium and gallium arsenide are presented in figures 2 and 3.

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How to Cite
Kazeem, B. A. (2025). Theoretical Study of Electrical Properties of a Germanium and Gallium Arsenide P-N Junction Diode in an Open Circuit. Journal of Multidisciplinary Science: MIKAILALSYS, 3(2), 625-642. https://doi.org/10.58578/mikailalsys.v3i2.5338

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Authors retain copyright and grant the journal right of first publication with the work simultaneously licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License that allows others to share the work with an acknowledgement of the work's authorship and initial publication in this journal.

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